Band structures and density of state of Ge/GeSiSn type-I quantum wells

The band structures and density of state of tensile strained Ge/GeSiSn QWs with different Sn composition are investigated by using 6-band k.p method. The band lineups of Ge/GeSiSn are given. The hole energy dispersion curves and density of state are calculated. The results are helpful for Si photonics device design.