Low noise InGaAs/InP SPAD for fiber-based quantum applications

We present an InGaAs/InP single-photon avalanche diode (SPAD) with $10 \mu \mathrm{m}$ -diameter active area, designed for fiber-based quantum applications. Improved design and fabrication lead to low dark count rate (1000 cps at 225 K), 25% photon detection efficiency and 100 ps (FWHM) timing jitter.