Simple model calculation for ion-beam-enhanced deposition

Abstract A simple model calculation (SMC) for the composition distribution of films synthesized by ion-beam-enhanced deposition (IBED) is presented. It is based on gaussian ion range distributions, and the compositional change of the film and diffusion processes are also taken into account. The SMC is first applied to calculate the depth profiles of SiN x film components (silicon and nitrogen) synthesized on a silicon substrate by IBED. The calculated results are then compared with experimental measurements and Monte Carlo calculations.