Pixel structure and method for producing pixel structure

The invention discloses a pixel structure and a method for producing the pixel structure. The pixel structure comprises an active element, a gate insulating layer, a dielectric insulating layer, a capacitor electrode, a protective layer and a pixel electrode. The active element comprises a gate, a semiconductor path layer, a source and a drain. The semiconductor path layer is covered by the dielectric insulating layer, wherein the dielectric coefficient of the dielectric insulating layer is higher than that of the gate insulating layer. The capacitor electrode is overlapped on the drain such that the capacitor electrode, the drain and the dielectric insulating layer therebetween form a storage capacitor structure. The protective layer is configured on the dielectric insulating layer. The capacitor electrode is located between the protective layer and the dielectric insulating layer. The pixel electrode is configured on the protective layer and is connected to the drain of the active element. The pixel structure of the invention has a sufficient storage capacitance value without the need of a large-area capacitor electrode, thereby facilitating an increase in the display aperture ratio of the pixel structure.