Enhancement-mode GaN HEMT power electronic device with low specific on resistance

An enhancement-mode GaN HEMT on silicon substrate was obtained by using p-type GaN Cap. P-type GaN cap was obtained by Mg doping. The activation concentration of the p-GaN cap was 3e17cm −3 with a thickness of 60nm. Selective dry etching was used to fabricate the device. Back metal and substrate thinning was used for improving the cooling capacity. A threshold voltage (V h ) of 1.2V was obtained with a maximum forward gate voltage of 7V. An output current (I D ) of 12A was obtained at V D and V G were 1V and 6V, respectively. The breakdown voltage of this device was larger than 350V, and the specific on resistance was 0.45 mΩ·cm 2 .