Preparation of PZT thin films by MOCVD using a new Pb precursor

Abstract Using (C2H5)3PbOCH2C(CH3)3 (triethyl n-pentoxy lead : TEPOL) as a new Pb precursor, PbO, PbTiO3 and PZT thin films were successfully grown by MOCVD. The main reaction for the growth of the PbO thin films was oxidation of TEPOL. PbTiO3 thin films, whose dielectric constants ranged from 50 to 200, were grown at substrate temperatures higher than 525°C. Tetragonal and rhombohedral PZT thin films were successfully obtained at substrate temperatures higher than 470°C and 500°C, respectively - these temperatures being 50°C and 40°C lower than when Pb(C2H5)4 was used as a Pb precursor. The PZT films obtained showed good dielectric and ferroelectric properties, and showed dielectric constants between 190 and 1000, remanent polarizations of 15–20 μC/cm2 and coercive fields of 70–90 kV/cm. The toxicity of TEPOL was also discussed.