A method for forming an FET with a structure for reducing the external resistance of the three-dimensional transistor by use of epitaxial layers and transistor

A method of forming a field effect transistor comprising the steps of: Forming a dummy gate (25) over a semiconductor body (20) of a first material; Growing an epitaxial semiconductor layer (27) on the body (20) on both sides of the dummy gate (25), so that there will be no growth of the first material; After the growth, forming source regions and drain regions (30) in the body (20) on both sides of the dummy gate (25); and Replacing the dummy gate (25) insulated with one of the body (20) conductive gate (52).