Effect of device parameters on bistable semiconductor laser

The effect of device parameters on static and dynamic properties of inhomogeneously current‐injected bistable semiconductor lasers has been analyzed. It is shown that in addition to the fraction of current injection region in the cavity, the device parameters, such as dopant concentration in active layer, facet reflectivity, and cavity length, affect the hysteresis width and threshold current. The mechanism of transition between lasing and nonlasing states is discussed, in which a new interpretation is given about the bias dependence of switch‐on delay time and the driving condition for switching off is clarified. The carrier increasing rates due to the bias current and dopant concentration in the active layer are dominant factors for the switching on and switching off, respectively.