Diagnosis of the profile of ion sources in point pinch diode

Abstract A new method is developed to evaluate the ion species resolved, one dimensional profile of an ion source for an intense pulsed ion beam. Using the method, ion source of “Point pinch diode”, a type of pinched electron beam diode, was evaluated. From the experiment, singly ionized medium mass ions are found to be produced in the whole area of the cathode hole (beam passageway) of diameter 2 mm. The source is constructed of many small spots, whereas multiply ionized medium mass ions (C (2–4)+ , O (2–5)+ ) are found to be produced in a single spot of diameter less than 0.3 mm.