Capacitor of semiconductor fabrication method

Capacitor production process of the semiconductor device includes a substrate onto the first insulating film and a step of forming a first contact and selectively etching and forming a second insulating film on the first insulating film, second insulating film, a first etching the first capacitor region third insulating film, which comprises a step with said first contact region to form a third insulating film on contact with the second insulating film, a step for exposing a first contact and a second insulating film on the capacitor region and, the step of forming any layer over the first conductive layer of the step, the capacitor region to form a first conductive layer on the step and the capacitor region and a third insulating film for etching the first insulating film in the first contact, any a step of etching using as a mask a first conductive layer on the third insulating layer, and a step of removing the arbitrary layer, and forming a dielectric film on the surface of the first conductive layer, forming a second conductive layer on the dielectric layer and a step.