Si doping superlattice structure on 6H-SiC(0001)

Si-DSL structures multilayers are prepared on 6H-SiC(0001) successfully. The energy offsets of the n-Si/n-6H-SiC heterojunction in the conduction band and valance band are 0.21eV and 1.65eV, respectively. TEM characterizations of the p/n-Si DSL confirms the epitaxial growth of the Si films with [1-11] preferred orientation and the misfit dislocations with a Burgers vector of 1/3 at the p-Si/n-Si interface. J-V measurements indicate that the heterostructure has apparent rectifying behavior. Under visible illumination with light intensity of 0.6W/cm 2 , the heterostructure demonstrates significant photoelectric response, and the photocurrent density is 2.1mA/cm 2 . Non-UV operation of the SiC-based photoelectric device is realized.