An improved model to predict DC characteristics of organic field-effect transistors

Organic field-effect transistors (OFETs) are becoming popular because of the ease associated with their fabrication and cost-effectiveness. Numerous models have been developed to predict the room temperature $$I-V$$ characteristics of OFETs involving their design, as well as material parameters. In this paper, we discuss efforts that have been made to develop a compact model which can be employed by design engineers with reasonable ease without compromising the accuracy of modeled characteristics. Both for linear and for saturation region of $$I-V$$ characteristics, a single expression involving a hyperbolic tangent function has been proposed. The proposed model addresses typically observed contact resistances of drain–source electrodes by incorporating the effective drain-to-source potential and thus generates OFETs output characteristics with improved accuracy. A modification in the device threshold voltage is proposed to improve modeled data of short channel OFETs. It has been demonstrated by evaluating root mean squared error (RMSE) values that the proposed technique is at least $$15\%$$ better than the best reported model of OFETs.