Electron beam induced current, cathodoluminescence and scanning photoluminescence study of GaN layers

Abstract Hydride vapor phase epitaxy GaN layers were studied by electron beam induced current (EBIC), cathodoluminescence (CL) and scanning photoluminescence (SPL). Both blue and yellow luminescence distributions were studied, showing spatial correlation. CL and EBIC images revealed a granular structure with grain sizes around 1 μm. The minority carrier diffusion length was measured obtaining values around 0.5–0.8 μm, which were correlated to the size of the bright grains observed in EBIC and CL images.