The hypothesis of charge components of the conductivity of a GaAs molecular beam epitaxy epi-layer

This paper presents our hypothesis on how to calculate the fractions of total conductivity based in part on the conductivities of a GaAs molecular beam epitaxy (MBE) epi-layer. The method allows the calculation of the carrier concentration and mobility of each component of a supposed multi-carrier system. The partial concentrations extracted from the solution of the neutrality equation are used to characterize the particular charge transport portions in the active layer in the form of conductance, G (S), values of these portions. It is important to note that it was assumed that the neutrality equation could be solved for the entire layer; however, it is likely that more layers (according to the physical sense) are present. Furthermore, scattering events for the investigated samples are presented. The analysis of the experimental results demonstrates the utility of our method in comparing the conductance of each part of the multi-layer system as a function of temperature. We present a different and alternative look at the conductivity of a GaAs MBE epi-layer with a mobility spectrum analysis. We introduce the physical element, X (or fitting parameter), to explain and allow for a fit of the experimental data with the calculated values.