Nonvolatile memory device, method of fabricating the same, and method of operating the same

The non-volatile memory device, a method of manufacturing the same, and the operation method is provided. Non-volatile memory device according to an embodiment of the present invention, parallel to each other while alternating bit lines and source lines arranged in; And wherein the bit line and the source while alternately arranged in between the lines, each of the drain select transistor, the memory transistor and Ibn string and including odd string and the drain select transistor comprising a source select transistor is the same structure as the memory transistor a first drain select transistor and the first and second drain of the position and the odd string of first and second drain select transistors of the source select transistor and the second selection comprises a transistor, said Ibn string drain of the same structure select transistor location is opposite and, share a single bit line disposed between a pair of adjacent Ibn string and odd string of and, together Ibn string and odd string adjacent the other pair share a single source line disposed between do.