Variations in the properties of an implantation-synthesized SixNy-Si heterosystem as a result of thermal and ion-beam treatments

Transmission electron microscopy, infrared spectroscopy, and the measurements of current-voltage characteristics and capacitance were used to study the influence of heat treatment and the long-range effect of irradiation of the rear side of an Si wafer with Ar, Ne, and Si ions on the state of an SixNy layer synthesized at the front side of this wafer. It is ascertained that the argon-ion bombardment of the wafer heated to 500°C is the most effective method for the formation of insulating silicon-nitride layers. The fact that the properties of SixNy layers are scarcely affected by irradiation with neon and silicon ions is consistent with the previously suggested model of a spontaneous-acoustic mechanism of the long-range effect produced by irradiation of silicon with argon ions.