Tunnelling Transient Spectroscopy on self‐assembled InAs Quantum Dots

We study electron tunnelling from self‐assembled InAs quantum dots with time‐resolved capacitance measurements at low temperature (T = 10 K). Within a simple WKB model the electric field dependence of the tunnelling rate is analyzed. The data reveal that tunnelling emission from s‐ and p‐like quantum dot states can clearly be resolved. The binding energies obtained from a triangular‐well model are in good agreement with values obtained with DLTS experiments.