Modeling and experimental results of CdxZn1-xTe detector response

We have developed a model of the statistical variations in the electrical charge transport in CdxZn1-xTe(CZT) detectors. The model includes a simulation of the charge carrier generation for each photon interaction, using a calculated absorption coefficient of the photoelectric absorption. Next, we simulate the induced signal as carriers drift towards the collecting electrode under trapping conditions with negligible detrapping. Finally, a pulse height histogram is composed simulating the spectral response of the detector and incorporating the electronic noise component. A comparison between experimental and calculated CZT spectra was performed. These results and the potential for using the model in detector design will be discussed and presented.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.