Top pinned magnetic tunnel junction stacks with high annealing tolerance for high density STT-MRAM applications

J. Swerts,Sebastien Couet,E. Liu,S. Mertens,Tsann Lin,S. Rao,W. Kim,S. Van Elshocht,A. Furnemont,Gouri Sankar Kar

Top pinned magnetic tunnel junction stacks with high annealing tolerance for high density STT-MRAM applications

2017

J. Swerts
Sebastien Couet
E. Liu
S. Mertens
Tsann Lin
S. Rao
W. Kim
S. Van Elshocht
A. Furnemont
Gouri Sankar Kar

Perpendicular magnetic tunnel junctions (MTJ) are widely being researched as they are the key component in advanced spin transfer torque magnetic random access memory (STT-MRAM).

Keywords:

Spin-transfer torque
Tunnel magnetoresistance
Condensed matter physics
Magnetoresistive random-access memory
Annealing (metallurgy)
Electronic engineering
Materials science
Perpendicular
high density
Stack (abstract data type)
random access memory

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