Wiring structure, manufacturing method of the semiconductor device and a semiconductor device having a wiring structure

Wiring structure having a Cu wiring damascene structure, in which case the semiconductor device having a wiring structure undergoes a heat treatment process, or even if subjected to heat history in the course of long-term use, possible to reliably suppress an increase in leakage current to provide a semiconductor device and methods for their preparation have a possible wiring structure and its wiring structure. Silicon as the composition component and (Si) and carbon (C), the oxygen (O) and be provided with a copper wire directly on the film including at least one of nitrogen (N), the above problems can be solved .