The nitride semiconductor structure

The present invention provides a nitride semiconductor structure, the current collapse to a nitride semiconductor device structure fabricated be suppressed. The nitride semiconductor structure comprising: a silicon substrate; and forming a layer on a silicon substrate and formed of a plurality of nitride semiconductor. A silicon substrate having a surface region and a region from the inner layer side, a plurality of nitride semiconductor sequentially. Resistivity of 0.1Ωcm or more surface area, the internal resistance of the region above 1000Ωcm.