High-power surface emitting semiconductor laser with extended vertical compound cavity

2003 
Novel, electrically pumped, vertical compound cavity InGaAs lasers emitting at 980 nm are described. These have generated 1 W continuous-wave multimode and 0.5 W continuous-wave in a fundamental TEM/sub 00/ mode and single frequency, with 90% coupling efficiency into a singlemode fibre.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    2
    References
    72
    Citations
    NaN
    KQI
    []