Cracking mechanism of CdZnTe polycrystalline film deposited on TFT circuit board at high temperature by close-spaced sublimation method

Abstract In this paper, CdZnTe polycrystalline films are grown on TFT circuit boards and ITO/TFT substrates by using close-spaced sublimation (CSS) technique. The phase, morphology and structure of CZT polycrystalline film were characterized by XRD, SEM and EDS, and the cracking mechanism of CZT film deposited on TFT circuit board at high temperature was studied. The results show that the substrate temperature was too high during experiment, which released the stress between Al film and ITO film, produced small hills, and made the binding force of ITO and CZT film greater than that of ITO film and Mo/Al/Mo, resulting in CZT film falling off. The presence of SiNx on TFT circuit board can promote the rupture of CZT film.