A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs

Abstract The hot carrier injection (HCI) effect induced degradation is investigated for gamma ray irradiated PD I/O SOI PMOSFETs with T-shaped gate and H-shaped gate. Radiation enhanced effect on degradation during hot carrier stress is observed in two kinds of samples. And it is observed that radiation has more significant effect on T-gate devices than H-gate during stress time. Besides, the change on gate current degradation induced by irradiation is also worth noticing.