Interfacial and electrical properties of HfAIO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation Interfacial and electrical properties of HfAIO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation Interfacial and electrical properties of HfAIO/GaSb metal-oxide-semiconductor capacitors with sulfur passivationInterfacial and electrical properties of HfAIO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

Interfacial and electrical properties of HfA10/GaSb metal-oxide-semiconductor capacitors （MOSCAPs） with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Dit of the HfAIO/GaSb interface by 35% and reduce the equivalent oxide thickness （EOT） from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy （HRXTEM） results. It was also found that GaSb-based MOSCAPs with HfA10 gate dielectrics have interfacial properties superior to those using HfO2 or A1203 dielectric layers.