Perspectives of fully-depleted SO1 transistors down to 20nm gate length

Device simulations have been carried out for n-channel fully depleted SO1 fransistors with undoped channels and single gates. Si body thickness, lateral gradient of the doping concenhation profiles in source and drain, and spacer width have been varied to explore the design space. Gate lengths, gate oxide thicknesses, and operating voltages were chosen for three technologv nodes (90, 65, and 45 nm) according to the specifcations of the International Technologv Roadmap for