Application of NRA to evaluation of boron implants in Si for shallow junctions

Abstract In shallow junction formation, the estimation of ion-implanted dopant doses is essential. Secondary ion mass spectrometry (SIMS) has been widely used for the acquisition of depth profiling and quantification of boron implants. However, SIMS analysis is unsuitable for accurate quantification in shallow regions. In this study, we propose nuclear reaction analysis (NRA) as a method for analyzing boron implants for shallow junctions. NRA was also used for the determination of the total amount of boron after rapid thermal annealing (RTA). The results revealed that the total amounts of boron in Si have obvious dependences on both the temperature and duration time of RTA. We proposed channeling-NRA for the evaluation of the activation ratios of boron atoms. In the case of high-temperature annealing, we found that about 90% of boron atoms were located in substitutional sites.