High-power AlGaN UVC LEDs using PhC reflector p-contact layers

We demonstrated an enhancement of light-extraction efficiency (LEE) in an AlGaN UVC light-emitting diode (LED) using photonic-crystal (PhC)-reflector fabricated on a p-GaN contact layer, which was introduced to realize both of low resistivity and high-reflectivity in p-contact layer. We fabricated an AlGaN UVC-LED with PhC-reflector on p-GaN contact layer, and confirmed that the external quantum efficiency (EQE) was increased by 1.7 times by introducing PhC-reflector. We also fabricated flip-chip UVC LED with PhC-reflector on p-contact layer and obtained more than 50 mW output power.