Method for manufacturing a cigs thin film

The present invention relates to a method for manufacturing a CIGS thin film using chemical vapor deposition or atomic layer deposition by simultaneously or sequentially feeding respective precursors into a chamber. More particularly, the present invention relates to a method for manufacturing a CIGS thin film using chemical vapor deposition by simultaneously feeding a copper (Cu) precursor, an indium (In) precursor, a gallium (Ga) precursor, and a selenium (Se) precursor onto a substrate mounted inside a vacuum chamber or by feeding a combination of at least two of the precursors, or relates to a method for manufacturing a CIGS thin film on a substrate by using atomic layer deposition, wherein the method includes the steps of: 1) positioning a substrate in a vacuum chamber and maintaining the substrate at a specific reaction temperature; 2) feeding a copper precursor into the vacuum chamber and allowing the copper precursor to react with the substrate; 3) performing a first purge for removing unreacted substances and by-products; 4) feeding an indium precursor into the vacuum chamber and allowing the indium precursor to react with the substrate; 5) performing a second purge for removing unreacted substances and by-products; 6) feeding a gallium precursor into the vacuum chamber and allowing the gallium precursor to react with the substrate; 7) performing a third purge for removing unreacted substances and by-products; 8) supplying a selenium precursor into the vacuum chamber and allowing the selenium precursor to react with the substrate; and 9) performing a fourth purge for removing unreacted substances and by-products. According to the present invention, a large area thin film can be provided with a short manufacturing time, high productivity, low manufacturing costs, and excellent film quality.