Study on the reflection of photothermal waves in a semiconducting medium under generalized thermoelastic theory

In this article, coupled generalized thermoelastic with thermal relaxation time and plasma theories were used to study the reflection problem at the surface of a semiinfinite semiconconducting medium during a photothermal process. Using the harmonic wave method, the reflection coefficient ratios were obtained analytically for the incident CI wave and incident rotational wave. The variations of the amplitude of reflection coefficient ratios with the angle of incidence are shown graphically for silicon. Effects of several parameters (thermal relaxation time, thermoelastic coupling parameter, and thermoelectric coupling parameter) on reflection coefficient ratios were given by numerical results.