Telecommunication-Wavelength Lasing in Er-doped GaN Multiple Quantum Wells at Room Temperature
2018
We report the realization of room-temperature, stimulated-emission in Er-doped-GaN multiple-quantum-wells at the 1.5-μm. Structures were grown by MOCVD and lasing was confirmed by threshold-behaviors of emission-intensity as functions of pump-fluence, spectral- linewidth-narrowing, excitation-length.
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