Preparation of Hafnium Oxide Thin Films grown by Atomic Layer Deposition

The growth of hafnium oxide thin films by atomic layer deposition was investigated in the temperature range of using as precursors. A self-limiting growth of was achieved at the substrate temperature of . The films were amorphous and very smooth (0.76-0.80 nm) as examined by X-ray diffractometer and atomic force microscopy, respectively. X-ray photoelectron spectroscopy analysis showed that the films grown at was almost stoichiometric. Electrical measurements performed on (20 nm)/Si MOS structures exhibited high dielectric constant and a remarkably low leakage current density of at an applied field of MV/cm, probably due to the stoichiometry of the films.