Radiation Hardness of a Silicon MESFET 4K × 1 sRAM

A comprehensive study of the radiation hardness of the silicon MESFET technology using LOCOS isolation is reported. A MESFET 4K × 1 sRAM fabricated on bulk silicon using LOCOS isolation has essentially no change in performance through 28.5 Mrad(Si) total gamma dose, the maximum dose tested. Transient gamma upset of the memory occurs at 1 × 107 Rad(Si)/s. Discrete MESFET and LOCOS device characteristics are also reported as a function of total gamma dose.