Gate Driver for p-GaN HEMTs with Real-Time Monitoring Capability of Channel Temperature

Normally-off p-GaN HEMTs with Schottky-type gate are becoming of common adoption in both industrial and consumer electronic market. The presence of a gate current with a remarkable dependence on the temperature of the device allows embedding a temperature sensing feature with very fast response into the gate-driving circuitry. In this work, a prototype of a gate driver circuit with temperature monitoring capability is presented and its applicability in a broad range of operating conditions is validated by means of a thorough experimental campaign.