New distributed model of NPT IGBT dedicated to power circuits design

Abstract In this paper, a new one-dimensional (1D) insulated gate bipolar transistor (IGBT) model is presented. The heart of this model is based on the analogical resolution of the ambipolar equation of diffusion. Indeed, carriers transport to broad areas and little doped power components is of a distributed nature. Approximation of the localised constants is no longer a valid solution. By taking into account, in the model, the side current into the P/P+ well, the 2D phenomenon, IGBT latch-up can be reviewed. The complete model developed under SABER as well as the static, dynamic results of simulation and the use in current converter are presented and compared to Hefner’s IGBT model. Simulation results of a inverter will be also presented to show the good behaviour of this IGBT model.