A nanoscale silicon on insulator transistor with superior performance using dual material gate and retrograde/halo doping in source/drain sides

Abstract This paper introduces two novel structures for silicon on insulator (SOI) metal-oxide-semiconductor field effect transistor (SOI-MOSFET) with nanoscale dimension and superior electrical performance. One structure only incorporates retrograde halo dopants (RHD) in the source side and uniform halo dopants in the drain side. The other device comprises dual material (DM) in the gate contact along with RHD in the source side and uniform halo dopants in the drain side (DM-RHD). Incorporation of retrograde dopants in the source side and uniform doping in the drain side of RHD and DM-RHD lead to improvements in the leakage current, sub-threshold slope and short channel effects. Hot carrier injection to the gate, channel length modulation and drain-induced barrier lowering are significantly improved with respect to the conventional SOI-MOSFET. The auxiliary gate, along with the main gate in the DM-RHD structure, improves off-current control in the channel compared with RHD and C–SOI counterparts. Because the proposed devices show these positive features, they can be utilized to satisfy International Technology Roadmap for Semiconductors requirements for next generation devices.