Large area MoS2/Si heterojunction-based solar cell through sol-gel method

Abstract Large area MoS 2 /Si heterojunction-based solar cell was prepared in which MoS 2 thin film was directly grown on p-Si wafer using sol-gel method. Chemical bonding and microstructure analysis show that the MoS 2 film was in the initial region of transition from amorphous to microcrystalline phase. Compared with the ITO/p-Si/Ag structure without MoS 2 , the open-circuit voltage (V OC ), short-circuit current density (J SC ) and fill factor (FF) of the ITO/MoS 2 /p-Si/Ag solar cell were improved dramatically, and the conversion efficiency (CE) increased from 1.1% to 4.6%. The insertion of MoS 2 film reduced the interface defects concentration and increased the depletion region width of the solar cell, showing its enhancement effect on both chemical passivation and field passivation.