Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask

A graphene nanoribbon (GNR) is an important basic structure to open a bandgap in graphene. The GNR processes reported in the literature are complex, time-consuming, and expensive; moreover, the device yield is relatively low. In this paper, a simple new process to fabricate a long and straight graphene nanoribbon with a high yield has been proposed. This process utilizes CVD graphene substrate and a ZnO nanowire as the hardmask for patterning. 8 µm long and 50‐100 nm wide GNRs were successfully demonstrated in high density without any trimming, and ∼10% device yield was realized with a top-down patterning process. After passivating the surfaces of the GNRs using a low temperature atomic layer deposition (ALD) of Al2O3, high performance GNR MOSFETs with symmetric drain-current‐gate-voltage (Id‐Vg) curves were demonstrated and a field effect mobility up to ∼1200 cm 2 V −1 s −1 was achieved at Vd = 10 mV. (Some figures in this article are in colour only in the electronic version)