Real-space Green’s tensors for stress and strain in crystals with cubic anisotropy

2005 
Semiconductor quantum dot QD and quantum wire QWI nanostructures have generated considerable experimental and theoretical interest during the last ten years because of the physics associated with the quantum confinement of carriers to less than three dimensions. Devices offer the realistic prospect of improved electronic and optical properties arising from the reduced dimensionality. QD lasers, for example, offer the possibility of reduced threshold currents, reduced temperature sensitivity, and increased differential gain allowing higher-speed operation at reduced power. Improved devices based on QD or QWI nanostructures can be engineered with desirable properties by the control of the materials, band gap, strain, size, shape, and orientation. 1,2
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