Electronic andoptical properties onnon-polar InGaN/GaNquantum-well structures

andoptical properties ofnon-polar (1120)havedemonstrated that GaN-based quantum wells grownon a-Q+p=0), (10 T0)m-plane ((p=766), and(112 2)-oriented wurtzitethenonpolar (10T0)i-plane and(1120)a-plane exhibit (WZ)InGaN/GaNquantumwell(QW) structures are photoluminescence characteristics thatareconsistent witha investigated usingthemultiband effective-mass theory. These result are cmpare withhoseo (000)-orieted W lackof polarization-ind uced electric fields. [6,7]Another results are compared withthoseof (0001 -oriented WZ aproc