Blocked impurity band very long wavelength infrared detector

Blocked impurity band (BIB) detector is a derivative of the impurity band conduction (IBC) detector. It can detect low-energy photons whose energy is much smaller than the band gap of the semiconductor through the electronic transition on the impurity band. The detection wavelength of the BIB detector is mainly determined by the substrate and doped impurities which can cover the range of 5–300 μm. Owing to the advantages of long detection wavelength, high detection rate and good radiation resistance, BIB detectors have been extensively studied and are widely used in various large-scale astronomical infrared detection platforms. Presently, Si-based BIB detectors are developing rapidly, but the development of Ge-based and GaAs-based BIB detectors is relatively slow. BIB detectors play an irreplaceable role in promoting the development of astronomy and related sciences. Developed countries such as Europe and the United States have invested a lot in scientific research on BIB detectors. With the development of China’s economy and technology, Chinese researchers hope eagerly that the domestic BIB detector can be put into use as soon as possible. Herein, in order to help the related researchers to quickly understand the BIB detector, the device physical model, preparation methods, testing methods and development status have been discussed, and the involved working mechanism and key device technology are also explored.