Fabrication of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact

We have investigated the device performance, such as the breakdown voltages between gate-source contacts and drain-source contacts, threshold voltage (Vth) and on resistance (RON), of enhancement-mode AlxGa1–xN/GaN junction heterostructure field-effect transistors (JHFET) with a p-type GaN gate. Fabricating an Al0.15Ga0.85N/GaN JHFET with a gate length of 2 μm without surface passivation, we have achieved a completely enhancement-mode JHFET with a threshold voltage of +0.55 V, and breakdown voltages between gate-source and drain-source were over 100 V and 250 V, respectively. RON is as low as 4.5 mΩ · cm2 at VG = 3.0 V. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)