The properties of a-Si:H films deposited on Mylar substrates by hot-wire plasma assisted technique

Abstract In this work we studied the influence of hydrogen dilution, rf power, and the filament and substrate temperatures on the electro-optical properties and composition of a-Si:H films produced by hot wire plasma assisted technique. The a-Si:H films were produced on Mylar substrates with growth rate of up to 37 A/s, ημτ product of 1.6×10 −7 cm 2 / V , photoconductivity to dark conductivity ratio of 1×10 4 (at AM1.5 radiation), and a dark conductivity of about 10 −10 (Ω cm ) −1 for substrate temperature of 130 °C, hydrogen dilution of 99%, filament temperature of 1700 °C, and rf power of 100 W.