A Study of N-Tunneling Field Effect Transistor (NTFET) through Silvaco TCAD Simulator to Overcome the Technology Limitation of Conventional MOSFET

In this paper, it is designed and analyzed the n type tunneling Field Effect Transistor (TFET) to obtain sub-threshold swing parameter (SS) below 60 mV/dec, it is better than the limit of conventional MOSFET. SILVACO TCAD is used for rigorous study of p-i-n structure based on Silicon. It is minimised the short channel effect of SiO2 material. It is obtained that TFET has good ability to produce high drive current at very low supply voltage (0.1V) with very low leakage current negligible.