Fabrication of quasi‐zero‐dimensional submicron dot array and capacitance spectroscopy in a GaAs/AlGaAs heterostructure

A new and very simple technique has been developed for fabricating two‐dimensional periodic submicron structures with feature size down to about 300 A. The etching mask is made by coating the material surface with a monolayer of closely packed uniform latex particles. We have performed capacitance measurements on GaAs/AlGaAs heterostructure samples with a quasi‐zero‐dimensional dot array of 3300, 3640, and 3940 A periodicities. A series of nearly equally spaced peaks in a curve of the derivative of capacitance with respect to gate voltage, which corresponds to the energy levels formed by the lateral electric confining potential, is observed.