Electrically-detected magnetic resonance near the p-doped/n-doped interface of Si junction diodes

Hyperfine structure has been observed in the electrically-detected magnetic resonance signal from a silicon p-n junction diode. By comparing the g value, hyperfine parameters, and bandgap energy level with known species having suitable abundances of isotopes with I = ½, the center is tentatively assigned as a platinum moiety, of presently undetermined structure. The observation indicates the usefulness of EDMR in the study of defects in ultrasmall Si devices, and raises certain questions regarding the current theories of spin-dependent recombination.