Radiation Tolerance of Doped La$_2$Zr$_2$O$_7$ and La$_2$Ti$_2$O$_7$ Epitaxial Thin Films

Epitaxial films of La$_2$(Ti$_x$Zr$_{1-x}$)$_2$O$_7$ were deposited on yttria-stabilized zirconia ($x$ = 0.1, 0.2; defected fluorite structure) or SrTiO$_3$ ($x$ = 0.9, 1.0; perovskite-like layered structure) and irradiated with 1 MeV Zr$^+$ ions. Amorphization measured by Rutherford backscattering spectrometry is qualitatively compared to spatially-resolved position-averaged convergent beam electron diffraction (PACBED) patterns collected during scanning transmission electron microscopy (STEM) imaging. La$_2$Ti$_2$O$_7$ (LTO) amorphizes more readily than La$_2$Zr$_2$O$_7$ (LZO), and increasing the Zr content in either crystal structure increases resistance to amorphization. The complementary nature of area-averaged RBS/c and local PACBED offers new insight into the radiation damage process in this system.