Growth process of KTa0.65Nb0.35O3 single crystals and the influence of Cu-doping

Abstract KTN single crystals have some excellent optoelectronic properties and it’s been difficult to manufacture. This paper analyzes the applicable and suitable growth process parameters for KTN crystal, and the influence of Cu-doping on crystal structure and processibility. Large-sized and high-quality KTa0.65Nb0.35O3 crystals with different Cu-doping contents have been grown by the Czochralski method. The results reveal that lattice parameters increase slightly along with the increase of Cu-doping in KTN crystals. And 1.5 mol% of Cu doped KTN crystal has higher hardness, larger density and better thermostability than pure, 1 mol% and 3 mol% of Cu doped crystals due to its fine quality and no macroscopic defects during growth process.