System and method for microwave-radiation annealing

Systems and methods are provided for annealing a semiconductor structure using microwave radiation. A semiconductor structure is provided. One or more energy-converting materials capable of increasing the semiconductor structure's absorption of microwave radiation are provided. Microwave radiation is applied to the energy-converting materials and the semiconductor structure to anneal the semiconductor structure for fabricating semiconductor devices. First local temperatures associated with one or more first zones of the semiconductor structure are detected. The microwave radiation applied to the energy-converting materials and the semiconductor structure is adjusted based at least in part on the detected first local temperatures.