Semiconductor arrangement and manufacture thereof

PURPOSE: To provide a novel semiconductor device, esp. diode and manufacture thereof. CONSTITUTION: The semiconductor device has a p-layer 2 and two n-layers 3, 4 doped at different intensities. A p-n junction between the p-layer 2 and heavily doped n-layer 3 is disposed completely inside a chip 1. The p-n junction between the p-layer 2 and n-layer 4 is disposed outside the chip 1. This device attains a good reproducible characteristic, without causing a high field intensities outside the chip. The manufacturing method may be executed outside a clean room.